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LTC4444EMS8E

LTC4444EMS8E

IC DRVR NCH MOSFET 8MSOP

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In Stock

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Quantity Available
Shenzhen
6257 pcs
Shanghai
9441 pcs
Hong Kong
2651 pcs
United States
1110 pcs
The above prices and inventory are for reference only, please consult customer service for the latest quotation and inventory!

Specifications of LTC4444EMS8E

Part Number LTC4444EMS8E
Date Code 2215
Quantity Available 19459 pcs
Manufacturer Linear Technology/Analog Devices
Lead Time Ship within 24 hours
QTY 1500
Datasheet LTC4444.pdf
Minimum Quantity More than 50pcs
Distributor SingSun
RoHS Status Lead free / RoHS Compliant
Ship From Hong Kong
Shipment Way EMS/SF/DHL/TNT/UPS/FedEx
Country of Assembly SOUTH KOREA
Country of Diffusion UNITED STATES
Lot Number KQ21525.38
MSL 3
Base Product Number LTC4444
Packaging Reel
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 7.2 V ~ 13.5 V
Logic Voltage - VIL, VIH 1.85V, 3.25V
Current - Peak Output (Source, Sink) 2.5A, 3A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 114V
Rise / Fall Time (Typ) 8ns, 5ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package 8-MSOP-EP

LTC4444EMS8E Features

● AEC-Q100 Qualified for Automotive Applications
● Bootstrap Supply Voltage to 114V
● Wide VCC Voltage: 7.2V to 13.5V
● Adaptive Shoot-Through Protection
● 2.5A Peak TG Pull-Up Current
● 3A Peak BG Pull-Up Current
● 1.2Ω TG Driver Pull-Down
● 0.55Ω BG Driver Pull-Down
● 5ns TG Fall Time Driving 1nF Load
● 8ns TG Rise Time Driving 1nF Load
● 3ns BG Fall Time Driving 1nF Load
● 6ns BG Rise Time Driving 1nF Load
● Drives Both High and Low Side N-Channel MOSFETs
● Undervoltage Lockout
● Thermally Enhanced 8-Lead MSOP Package

LTC4444EMS8E Applications

● Distributed Power Architectures
● Automotive Power Supplies
● High Density Power Modules
● Telecommunications

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LTC4444EMS8E Description

The LTC4444EMS8E is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance.

The LTC4444 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground.

The LTC4444EMS8E contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously.

For a similar driver in this product family, please refer to the chart below.

LTC4444EMS8E Tags

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